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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1436 DESCRIPTION *High DC Current Gain : hFE= 1000(Min.)@ IC= 5A, VCE= 3V *Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min) *Complement to Type 2SB1032 APPLICATIONS *Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 120 V 120 V 7 V 10 A 15 A 80 W UNIT .cn mi e IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @TC=25 Junction Temperature PC Tj 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO ICEO hFE PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff current Collector Cutoff current DC Current Gain CONDITIONS IC= 25mA, RBE= IE= 200mA ,IC= 0 IC= 5A, IB= 10mA B 2SD1436 MIN 120 7 TYP. MAX UNIT V V 1.5 3.0 2.0 3.5 0.1 10 20000 V V V V mA A IC= 10A, IB= 0.1A IC= 5A, IB= 10mA B Switching Times ton toff Turn-On Time Turn-Off Time w w w. .cn mi cse is IC= 10A, IB= 0.1A VCB= 120V, IE= 0 VCE= 100V, RBE= IC= 5A; VCE= 3V 1000 0.8 IC = 5A, IB1 = -IB2= 10mA 4.0 s s isc Websitewww.iscsemi.cn |
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